Fabrication and characterization of GaN-based LEDs grown on chemical wet-etched patterned sapphire substrates

被引：44

作者：

Lee, Y. J. ^{[1
]}

Kuo, H. C.

Lu, T. C.

Su, B. J.

Wang, S. C.

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2006年 / 153卷 / 12期

关键词：

D O I：

10.1149/1.2359701

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Characteristics of GaN-based light-emitting diodes (LEDs) grown on the chemical wet-etched patterned sapphire substrates (CWE-PSS) with different crystallography-etched facets were investigated. An improvement of 40% on the overall quantum efficiency was achieved by adopting this CWE-PSS scheme. A Monte Carlo ray-tracing method was employed to derive the optimized condition of sapphire etching time, and the calculated result demonstrated the same trend with real device measurement. Adopting the CWE-PSS in LEDs could not only improve the epitaxial quality but also increase the extraction quantum efficiency due to crystallography-etched facets efficiently scattering the guided light to enter the escape cone on the top of device surfaces. Finally, we observed better aging behaviors of CWE-PSS LEDs, which could be due to the reduction of threading dislocations of the epitaxial layers. (c) 2006 The Electrochemical Society.

引用

页码：G1106 / G1111

页数：6

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