The optical and electrical properties of ZnO:Zr films

被引：11

作者：

Bian, Haiqin ^{[1
]}

Ma, Shuyi ^{[1
]}

Yang, Guijin ^{[1
]}

Zhu, Haibin ^{[1
]}

Xu, Xiaoli ^{[1
]}

Yan, Shaohui ^{[1
]}

Gao, Jiming ^{[1
]}

Zhang, Zhengmei ^{[1
]}

机构：

[1] Northwest Normal Univ, Coll Phys & Elect Engn, Key Lab Atom & Mol Phys & Funct Mat Gansu Prov, Lanzhou 730070, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2016年 / 672卷

基金：

中国国家自然科学基金;

关键词：

Zirconium doped zinc oxide; X-ray diffraction; UltraViolet detector; ZR-DOPED ZNO; CHEMICAL-VAPOR-DEPOSITION; PULSED-LASER DEPOSITION; OXIDE THIN-FILMS; ZINC-OXIDE; MAGNETIC SEMICONDUCTOR; CU; EMISSION; PHOTORESPONSE; NANOPARTICLES;

D O I：

10.1016/j.jallcom.2016.02.178

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Zirconium doped zinc oxide (ZnO:Zr) films at different Zr doping concentrations were deposited by radio frequency (RF) reactive magnetron sputtering. The effect of Zr contents on the crystalline structure, optical and electrical properties of the as-deposited ZnO:Zr films were systematically investigated. The results showed that ZnO:Zr film for 0.51 at% had a stronger preferred orientation toward the c-axis and a better crystallinity which were be good for UV photosensitivity. The lowest resistivity of 31.8 Omega cm was obtained for 0.51 at% Zr doped ZnO film. The UV photosensitivity showed that photodetectors based on ZnO:Zr film for 0.51 at% had very fast response and a higher photocurrent under UV illumination, which was attributed to the release of trapped electrons from surface defects or adsorbed oxygen. The photosensitivity mechanism of ZnO:Zr films has been also discussed in present paper. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：20 / 26

页数：7

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