Raman study of the metal-insulator transition in pyrochlore Mo oxides

被引:18
|
作者
Taniguchi, K [1 ]
Katsufuji, T
Iguchi, S
Taguchi, Y
Takagi, H
Tokura, Y
机构
[1] Univ Tokyo, Dept Adv Mat Sci, Kasiwa 2778581, Japan
[2] Waseda Univ, Dept Phys, Tokyo 1698555, Japan
[3] JST, PRESTO, Kawaguchi 3320012, Japan
[4] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
[5] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[6] Natl Inst Adv Ind Sci & Technol, CERC, Tsukuba, Ibaraki 3058562, Japan
[7] RIKEN, Saitama 3510198, Japan
[8] Japan Sci & Technol Corp, ERATO, Spin Superstruct Project, Tsukuba, Ibaraki 3058562, Japan
来源
PHYSICAL REVIEW B | 2004年 / 70卷 / 10期
关键词
D O I
10.1103/PhysRevB.70.100401
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Raman scattering spectra have been investigated for the correlated 4d-electron system, R2Mo2O7 (R=Nd, Sm, Gd, Tb,Dy,Nd1-xDyx), which undergoes a metal-insulator transition with changing the rare-earth ion R, or equivalently the one-electron bandwidth. It is found that several phonon peaks modulating the Mo-O-Mo bond angle appear in the metallic phase (R=Nd, Sm, Gd, Nd1-xDyx), whereas they are remarkably suppressed in intensity in the insulating phase (R=Tb,Dy). This result indicates that the phonon modes of R2Mo2O7 are coupled with the electron-hole excitation across the Fermi level, thus probing sensitively the low-energy charge dynamics in the vicinity of the bandwidth-control Mott transition.
引用
收藏
页码:100401 / 1
页数:4
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