Potential profiling of the nanometer-scale charge-depletion layer in n-ZnO/p-NiO junction using photoemission spectroscopy

被引：28
作者：
Ishida, Yukiaki [1 ]
Fujimori, Atsushi
Ohta, Hiromichi
Hirano, Masahiro
Hosono, Hideo
机构：
[1] Univ Tokyo, Dept Phys, Kashiwa, Chiba 2778561, Japan
[2] Univ Tokyo, Dept Complex Sci, Kashiwa, Chiba 2778561, Japan
[3] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[4] Tokyo Inst Technol, ERATO, SORST, JST,Frontier Collaborat Res Ctr,Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 15期
关键词：
D O I：
10.1063/1.2358858
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors have performed a depth-profile analysis of an all-oxide p-n junction diode n-ZnO/p-NiO using photoemission spectroscopy combined with Ar-ion sputtering. Systematic core-level shifts were observed during the gradual removal of the ZnO overlayer, and were interpreted using a model based on charge conservation. Spatial profile of the potential around the interface was deduced, including the charge-depletion width of 2.3 nm extending on the ZnO side and the built-in potential of 0.54 eV. (c) 2006 American Institute of Physics.
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