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Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio
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Kakkerla, Ramesh Kumar
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Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan

Yu, Hung Wei
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Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan

Ko, Hua Lun
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Natl Chiao Tung Univ, Int Coll Semicond Technol, 1001 Univ Rd, Hsinchu 30010, Taiwan Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan

Singh, Sankalp Kumar
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Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan

Lee, Ching Ting
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Yuan Ze Univ, Dept Photon Engn, Taoyuan 320, Taiwan Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan

Chang, Edward Yi
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Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan
Natl Chiao Tung Univ, Int Coll Semicond Technol, 1001 Univ Rd, Hsinchu 30010, Taiwan
Natl Chiao Tung Univ, Dept Elect Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan
机构:
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Int Coll Semicond Technol, 1001 Univ Rd, Hsinchu 30010, Taiwan
[3] Natl Chiao Tung Univ, Dept Elect Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan
[4] Yuan Ze Univ, Dept Photon Engn, Taoyuan 320, Taiwan
关键词:
Nanomaterials;
Semiconducting III-V materials;
MOCVD;
Infrared devices;
Crystal structure;
Antimonides;
SURFACE-ENERGY;
CONTACT-ANGLE;
GAAS;
MECHANISMS;
INTERFACE;
INP;
D O I:
10.1016/j.jcrysgro.2019.06.016
中图分类号:
O7 [晶体学];
学科分类号:
0702 ;
070205 ;
0703 ;
080501 ;
摘要:
In this work, the influence of V/III ratio on self-catalyzed InSb nanowire (NW) crystal structure is investigated using metal organic chemical vapor deposition. The effective balance of V/III ratio determines the change of InSb NW crystal structure from zincblende to wurtzite. Particularly, as group-V molar flow varies from 6.4 x 10(-5) to 8.0 x 10(-5) mol/min, wurtzite segment length of InSb NW increases from 16 +/- 9 nm to 89 +/- 9 nm, whereas zincblende crystal phase is observed for other molar flows. We interpret the observed phase transition to a lower surface energy of In-Sb alloy droplet than pure In-droplet, which makes triple phase line nucleation energetically favorable. This study gives insight on single growth parameter (V/III ratio) change to the InSb NW crystal control, such a technique is essential to selectively tune the crystal phase of single NW for various applications.
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页码:30 / 36
页数:7
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共 46 条
[1]
The Role of Surface Energies and Chemical Potential during Nanowire Growth
[J].
Algra, Rienk E.
;
Verheijen, Marcel A.
;
Feiner, Lou-Fe
;
Immink, George G. W.
;
van Enckevort, Willem J. P.
;
Vlieg, Elias
;
Bakkers, Erik P. A. M.
.
NANO LETTERS,
2011, 11 (03)
:1259-1264

Algra, Rienk E.
论文数: 0 引用数: 0
h-index: 0
机构:
Philips Res Labs Eindhoven, NL-5656 AE Eindhoven, Netherlands
Mat Innovat Inst, NL-2628 CD Delft, Netherlands
Radboud Univ Nijmegen, Inst Mol & Mat, NL-6525 AJ Nijmegen, Netherlands Philips Res Labs Eindhoven, NL-5656 AE Eindhoven, Netherlands

Verheijen, Marcel A.
论文数: 0 引用数: 0
h-index: 0
机构:
Philips Res Labs Eindhoven, NL-5656 AE Eindhoven, Netherlands
Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands Philips Res Labs Eindhoven, NL-5656 AE Eindhoven, Netherlands

Feiner, Lou-Fe
论文数: 0 引用数: 0
h-index: 0
机构:
Philips Res Labs Eindhoven, NL-5656 AE Eindhoven, Netherlands
Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands Philips Res Labs Eindhoven, NL-5656 AE Eindhoven, Netherlands

Immink, George G. W.
论文数: 0 引用数: 0
h-index: 0
机构:
Philips Res Labs Eindhoven, NL-5656 AE Eindhoven, Netherlands Philips Res Labs Eindhoven, NL-5656 AE Eindhoven, Netherlands

van Enckevort, Willem J. P.
论文数: 0 引用数: 0
h-index: 0
机构:
Radboud Univ Nijmegen, Inst Mol & Mat, NL-6525 AJ Nijmegen, Netherlands Philips Res Labs Eindhoven, NL-5656 AE Eindhoven, Netherlands

Vlieg, Elias
论文数: 0 引用数: 0
h-index: 0
机构:
Radboud Univ Nijmegen, Inst Mol & Mat, NL-6525 AJ Nijmegen, Netherlands Philips Res Labs Eindhoven, NL-5656 AE Eindhoven, Netherlands

Bakkers, Erik P. A. M.
论文数: 0 引用数: 0
h-index: 0
机构:
Philips Res Labs Eindhoven, NL-5656 AE Eindhoven, Netherlands
Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands Philips Res Labs Eindhoven, NL-5656 AE Eindhoven, Netherlands
[2]
Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD
[J].
Anandan, Deepak
;
Kakkerla, Ramesh Kumar
;
Yu, Hung Wei
;
Ko, Hua Lun
;
Nagarajan, Venkatesan
;
Singh, Sankalp Kumar
;
Lee, Ching Ting
;
Chang, Edward Yi
.
JOURNAL OF CRYSTAL GROWTH,
2019, 506
:45-54

论文数: 引用数:
h-index:
机构:

Kakkerla, Ramesh Kumar
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan

Yu, Hung Wei
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan

Ko, Hua Lun
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Chiao Tung Univ, Int Coll Semicond Technol, 1001 Univ Rd, Hsinchu 30010, Taiwan Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan

论文数: 引用数:
h-index:
机构:

Singh, Sankalp Kumar
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan

Lee, Ching Ting
论文数: 0 引用数: 0
h-index: 0
机构:
Yuan Ze Univ, Dept Photon Engn, Taoyuan 320, Taiwan Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan

Chang, Edward Yi
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan
Natl Chiao Tung Univ, Dept Elect Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan
Natl Chiao Tung Univ, Int Coll Semicond Technol, 1001 Univ Rd, Hsinchu 30010, Taiwan Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan
[3]
Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1-x Sb x nanowires
[J].
Anyebe, E. A.
;
Rajpalke, M. K.
;
Veal, T. D.
;
Jin, C. J.
;
Wang, Z. M.
;
Zhuang, Q. D.
.
NANO RESEARCH,
2015, 8 (04)
:1309-1319

Anyebe, E. A.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

Rajpalke, M. K.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Liverpool, Stephenson Inst Renewable Energy, Liverpool L69 7ZF, Merseyside, England
Univ Liverpool, Dept Phys, Liverpool L69 7ZF, Merseyside, England Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

Veal, T. D.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Liverpool, Stephenson Inst Renewable Energy, Liverpool L69 7ZF, Merseyside, England
Univ Liverpool, Dept Phys, Liverpool L69 7ZF, Merseyside, England Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

Jin, C. J.
论文数: 0 引用数: 0
h-index: 0
机构:
Sun Yat Sen Univ, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

Wang, Z. M.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Sichuan, Peoples R China Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

Zhuang, Q. D.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England
Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Sichuan, Peoples R China Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England
[4]
The metal-organic chemical vapor deposition and properties of III-V antimony-based semiconductor materials
[J].
Biefeld, RM
.
MATERIALS SCIENCE & ENGINEERING R-REPORTS,
2002, 36 (04)
:105-142

Biefeld, RM
论文数: 0 引用数: 0
h-index: 0
机构:
Sandia Natl Labs, Dept 01126MS 0601, Albuquerque, NM 87185 USA Sandia Natl Labs, Dept 01126MS 0601, Albuquerque, NM 87185 USA
[5]
Synthesis and properties of antimonide nanowires
[J].
Borg, B. Mattias
;
Wernersson, Lars-Erik
.
NANOTECHNOLOGY,
2013, 24 (20)

Borg, B. Mattias
论文数: 0 引用数: 0
h-index: 0
机构:
Lund Univ, SE-22100 Lund, Sweden Lund Univ, SE-22100 Lund, Sweden

论文数: 引用数:
h-index:
机构:
[6]
High-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy
[J].
Caroff, Philippe
;
Wagner, Jakob B.
;
Dick, Kimberly A.
;
Nilsson, Henrik A.
;
Jeppsson, Mattias
;
Deppert, Knut
;
Samuelson, Lars
;
Wallenberg, L. Reine
;
Wernersson, Lars-Erik
.
SMALL,
2008, 4 (07)
:878-882

Caroff, Philippe
论文数: 0 引用数: 0
h-index: 0
机构:
Lund Univ, Solid State Phys Nanometer Struct Consortium, SE-22100 Lund, Sweden Lund Univ, Solid State Phys Nanometer Struct Consortium, SE-22100 Lund, Sweden

论文数: 引用数:
h-index:
机构:

Dick, Kimberly A.
论文数: 0 引用数: 0
h-index: 0
机构:
Lund Univ, Solid State Phys Nanometer Struct Consortium, SE-22100 Lund, Sweden Lund Univ, Solid State Phys Nanometer Struct Consortium, SE-22100 Lund, Sweden

Nilsson, Henrik A.
论文数: 0 引用数: 0
h-index: 0
机构:
Lund Univ, Solid State Phys Nanometer Struct Consortium, SE-22100 Lund, Sweden Lund Univ, Solid State Phys Nanometer Struct Consortium, SE-22100 Lund, Sweden

Jeppsson, Mattias
论文数: 0 引用数: 0
h-index: 0
机构:
Lund Univ, Solid State Phys Nanometer Struct Consortium, SE-22100 Lund, Sweden Lund Univ, Solid State Phys Nanometer Struct Consortium, SE-22100 Lund, Sweden

论文数: 引用数:
h-index:
机构:

论文数: 引用数:
h-index:
机构:

Wallenberg, L. Reine
论文数: 0 引用数: 0
h-index: 0
机构:
Polymer & Mat Chem nCHREM, SE-22100 Lund, Sweden Lund Univ, Solid State Phys Nanometer Struct Consortium, SE-22100 Lund, Sweden

论文数: 引用数:
h-index:
机构:
[7]
Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy
[J].
Cirlin, G. E.
;
Dubrovskii, V. G.
;
Samsonenko, Yu. B.
;
Bouravleuv, A. D.
;
Durose, K.
;
Proskuryakov, Y. Y.
;
Mendes, Budhikar
;
Bowen, L.
;
Kaliteevski, M. A.
;
Abram, R. A.
;
Zeze, Dagou
.
PHYSICAL REVIEW B,
2010, 82 (03)

Cirlin, G. E.
论文数: 0 引用数: 0
h-index: 0
机构:
St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia
Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 190103, Russia St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia

Dubrovskii, V. G.
论文数: 0 引用数: 0
h-index: 0
机构:
St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia
Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia

Samsonenko, Yu. B.
论文数: 0 引用数: 0
h-index: 0
机构:
St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia
Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 190103, Russia St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia

Bouravleuv, A. D.
论文数: 0 引用数: 0
h-index: 0
机构:
St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia
Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia

Durose, K.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Durham, Dept Phys, Durham DH1 3BH, England St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia

Proskuryakov, Y. Y.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Durham, Dept Phys, Durham DH1 3BH, England St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia

Mendes, Budhikar
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Durham, Dept Phys, Durham DH1 3BH, England St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia

Bowen, L.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Durham, Dept Phys, Durham DH1 3BH, England St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia

Kaliteevski, M. A.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Durham, Dept Phys, Durham DH1 3BH, England St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia

Abram, R. A.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Durham, Dept Phys, Durham DH1 3BH, England St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia

Zeze, Dagou
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Durham, Dept Phys, Durham DH1 3BH, England St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia
[8]
Two Different Growth Mechanisms for Au-Free InAsSb Nanowires Growth on Si Substrate
[J].
Du, Wenna
;
Yang, Xiaoguang
;
Pan, Huayong
;
Wang, Xiaoye
;
Ji, Haiming
;
Luo, Shuai
;
Ji, Xianghai
;
Wang, Zhanguo
;
Yang, Tao
.
CRYSTAL GROWTH & DESIGN,
2015, 15 (05)
:2413-2418

Du, Wenna
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

Yang, Xiaoguang
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

Pan, Huayong
论文数: 0 引用数: 0
h-index: 0
机构:
Peking Univ, Dept Elect, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

Wang, Xiaoye
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

Ji, Haiming
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

Luo, Shuai
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

Ji, Xianghai
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

Wang, Zhanguo
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

Yang, Tao
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[9]
Development of Growth Theory for Vapor Liquid Solid Nanowires: Contact Angle, Truncated Facets, and Crystal Phase
[J].
Dubrovskii, V. G.
.
CRYSTAL GROWTH & DESIGN,
2017, 17 (05)
:2544-2548

Dubrovskii, V. G.
论文数: 0 引用数: 0
h-index: 0
机构:
St Petersburg Acad Univ, Khlopina 8-3, St Petersburg 194021, Russia
Russian Acad Sci, Ioffe Phys Tech Inst, Politekhnicheskaya 26, St Petersburg 194021, Russia
ITMO Univ, Kronverkskiy Pr 49, St Petersburg 197101, Russia St Petersburg Acad Univ, Khlopina 8-3, St Petersburg 194021, Russia
[10]
Growth kinetics and crystal structure of semiconductor nanowires
[J].
Dubrovskii, V. G.
;
Sibirev, N. V.
;
Harmand, J. C.
;
Glas, F.
.
PHYSICAL REVIEW B,
2008, 78 (23)

Dubrovskii, V. G.
论文数: 0 引用数: 0
h-index: 0
机构:
Russian Acad Sci, St Petersburg Phys & Technol Ctr Res & Educ, St Petersburg 195220, Russia
Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Russian Acad Sci, St Petersburg Phys & Technol Ctr Res & Educ, St Petersburg 195220, Russia

Sibirev, N. V.
论文数: 0 引用数: 0
h-index: 0
机构:
Russian Acad Sci, St Petersburg Phys & Technol Ctr Res & Educ, St Petersburg 195220, Russia Russian Acad Sci, St Petersburg Phys & Technol Ctr Res & Educ, St Petersburg 195220, Russia

Harmand, J. C.
论文数: 0 引用数: 0
h-index: 0
机构:
CNRS LPN, F-91460 Marcoussis, France Russian Acad Sci, St Petersburg Phys & Technol Ctr Res & Educ, St Petersburg 195220, Russia

Glas, F.
论文数: 0 引用数: 0
h-index: 0
机构:
CNRS LPN, F-91460 Marcoussis, France Russian Acad Sci, St Petersburg Phys & Technol Ctr Res & Educ, St Petersburg 195220, Russia