Modeling atomic hydrogen diffusion in GaAs

被引：0

作者：

Kagadei, V ^{[1
]}

Nefyodtsev, E ^{[1
]}

机构：

[1] Res Inst Semicond Devices, Tomsk 634034, Russia

来源：

MICRO- AND NANOELECTRONICS 2003 | 2004年 / 5401卷

关键词：

modeling; atomic hydrogen; diffusion; GaAs; diffusion barrier; passivating of centers;

D O I：

10.1117/12.562666

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The hydrogen diffusion model in GaAs in conditions of an intense flow of penetrating atoms has been developed. It is shown that the formation undersurface diffusion barrier layer from immobile interstitial molecules of hydrogen reduce probability of atoms penetration into crystal and rate of their diffusion in GaAs, and influence on the process of shallow-and/or deep-centers passivation. It is exhibited that the influence of diffusion barrier should be taken into account at optimum mode selection of GaAs structure hydrogenation.

引用

页码：677 / 682

页数：6

共 7 条

[1] REACTIVITY OF III-V AND II-VI SEMICONDUCTORS TOWARD HYDROGEN - SURFACE MODIFICATION AND EVOLUTION IN AIR [J].