A high performance 16 Mb DRAM using giga-bit technologies

被引:0
作者
Jeong, GT
Lee, KC
Ha, DW
Lee, KH
Kim, KH
Kim, IG
Kim, DH
Kim, K
机构
[1] Samsung Electronics Co, Kyungki-Do, Korea, Republic of
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An experimental high performance 16 Mb Dynamic Random Access Memory (DRAM) having a 0.18 mu m design rule for gigabit DRAM's was developed, Junction leakage current and junction capacitance were reduced by shallow trench isolation (STI), A fast access time even at low operation voltage (1.5 V) was achieved by TiSi2 gate and new circuit techniques, Large sensing margin and stable operation were achieved by using a new dielectric material (Ta2O5,) in the cell capacitor, Insufficient depth of focus margin for back-end of line process was overcome by triple metallization scheme with one W and two Al metals, With these new technologies, high speed of 28 ns row address access time (T-rac) at 1.5 V and small chip size of 5.3 x 5.4 mm(2) were achieved.
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收藏
页码:2064 / 2069
页数:6
相关论文
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