Highly transparent RF magnetron-sputtered indium tin oxide films for a-Si:H/c-Si heterojunction solar cells amorphous/crystalline silicon

被引:18
作者
Hussain, Shahzada Qamar [1 ,2 ]
Oh, Woong-Kyo [3 ]
Ahn, Shihyun [3 ]
Anh Huy Tuan Le [3 ]
Kim, Sunbo [1 ]
Iftiquar, S. M. [3 ]
Velumani, Subramaniam [3 ,4 ]
Lee, Youngseok [1 ]
Yi, Junsin [1 ,3 ]
机构
[1] Sungkyunkwan Univ, Dept Energy Sci, Suwon 440746, South Korea
[2] COMSATS, Inst Informat & Technol, Dept Phys, Lahore 54000, Pakistan
[3] Sungkyunkwan Univ, Coll Informat & Commun Engn, Suwon 440746, South Korea
[4] CINVESTAV IPN, SEES, Dept Elect Engn, Mexico City 07360, DF, Mexico
关键词
ITO films; RF power; Carrier lifetime; Anti-reflection electrode; amorphous/crystalline silicon; ITO THIN-FILMS; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; WORK FUNCTION; POWER; TEMPERATURE;
D O I
10.1016/j.mssp.2014.02.044
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We prepared highly transparent magnetron-sputtered indium tin oxide (ITO) films deposited at various RF powers for a-Si:H(p)/c-Si heterojunction solar cell applications. The surface morphology of ITO films improved in terms of an increase in grain size as the RF power increased. Rapid growth of the (400) plane was observed with increasing RF power, while the (222) plane remain unchanged. The ITO film deposited at 100 W showed the lowest resistivity of 3.8 x 10(-4) Omega cm and highest visible transmittance of 90.19%. The deposition rate and optical bandgap of ITO films were varied from 20 to 100 nm/min and from 3.68 to 3.77 eV for RF power from 50 to 250 W, respectively. Highly transparent ITO films were utilized as the front anti-reflection layer in heterojunctions with intrinsic thinlayer (HIT) solar cells showed the efficiency of 16.3% for RF power of 100 W. The HIT solar cells deposited at RF power of 100 W also exhibited higher carrier lifetime and implied voltage. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码:225 / 230
页数:6
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