Effect of substrate temperature on polycrystalline Cd0.9Zn0.1Te thin films studied by Raman scattering spectroscopy

被引:17
作者
Sridharan, M [1 ]
Mekaladevi, M
Narayandass, SK
Mangalaraj, D
Lee, HC
机构
[1] Univ Autonoma Barcelona, Dept Fis, Grp Fis Mat 1, E-08193 Barcelona, Spain
[2] Bharathiar Univ, Dept Phys, Thin Film Lab, Coimbatore 641046, Tamil Nadu, India
[3] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea
关键词
Cd0.9Zn0.1Te films; vacuum evaporation; RBS; XRD; AFM; Raman scattering;
D O I
10.1002/crat.200310190
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Cd0.9Zn0.1Te thin films were prepared by vacuum evaporation onto well-cleaned glass substrates maintained at 300, 373 and 473 K. X-ray diffraction studies revealed that the films have zinc blende structure with preferential (I 11) orientation. Raman peak of the room temperature deposited film appeared at 140.30 cm(-1) and 159.65 cm(-1) were for the transverse optic (TO) and longitudinal optic (LO) phonons respectively. The XRD patterns of the higher substrate temperature deposited films exhibited an improvement in the crystallinity of the films. The Raman peak intensity increases and the FWHM decreases for the films deposited at higher substrate temperature. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:328 / 332
页数:5
相关论文
共 15 条
  • [1] LATTICE VIBRATION SPECTRA OF ZNXCD1-XTE ALLOYS
    HARADA, H
    NARITA, S
    [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1971, 30 (06) : 1628 - +
  • [3] FORBIDDEN ONE-LO-PHONON RESONANT RAMAN-SCATTERING AND MULTIPHONON SCATTERING IN PURE CDTE CRYSTALS
    ISLAM, SS
    RATH, S
    JAIN, KP
    ABBI, SC
    JULIEN, C
    BALKANSKI, M
    [J]. PHYSICAL REVIEW B, 1992, 46 (08): : 4982 - 4985
  • [4] RAMAN-SCATTERING FROM ION-IMPLANTED SILICON
    JAIN, KP
    SHUKLA, AK
    ASHOKAN, R
    ABBI, SC
    BALKANSKI, M
    [J]. PHYSICAL REVIEW B, 1985, 32 (10): : 6688 - 6691
  • [5] TERNARY II-VI-COMPOUND THIN-FILMS FOR TANDEM SOLAR-CELL APPLICATIONS
    KIMMERLE, J
    MENNER, R
    SCHOCK, HW
    VALERA, A
    [J]. THIN SOLID FILMS, 1985, 126 (1-2) : 23 - 29
  • [6] Surface passivation of HgCdTe by CdZnTe and its characteristics
    Lee, TS
    Choi, KK
    Jeoung, YT
    Kim, HK
    Kim, JM
    Kim, YH
    Chang, JM
    Song, WS
    Kim, SU
    Park, MJ
    Lee, SD
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (06) : 552 - 555
  • [7] DEPOSITION AND PROPERTIES OF ZINC-CADMIUM TELLURIDE FILMS
    PETERS, MG
    FAHRENBRUCH, AL
    BUBE, RH
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (06): : 3098 - 3102
  • [8] RAMAN SPECTRA AND LATTICE DYNAMICS OF TELLURIUM
    PINE, AS
    DRESSELHAUS, G
    [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (02): : 356 - +
  • [9] STUDY OF THE MICROSTRUCTURE AND OPTICAL-PROPERTIES OF POLYCRYSTALLINE CD1-XZNXTE THIN-FILMS
    SAMANTA, B
    SHARMA, SL
    CHAUDHURI, AK
    [J]. VACUUM, 1995, 46 (07) : 739 - 743
  • [10] CRYSTAL-GROWTH OF LARGE-AREA SINGLE-CRYSTAL CDTE AND CDZNTE BY THE COMPUTER-CONTROLLED VERTICAL MODIFIED-BRIDGMAN PROCESS
    SEN, S
    KONKEL, WH
    TIGHE, SJ
    BLAND, LG
    SHARMA, SR
    TAYLOR, RE
    [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 111 - 117