Implantation sites of Ce and Gd in diamond

被引:8
作者
Bharuth-Ram, K
Vetter, U
Hofsäss, H
Ronning, C
Dietrich, M
机构
[1] Univ KwaZulu Natal, Dept Phys, ZA-4000 Durban, South Africa
[2] Univ Gottingen, Inst Phys 2, D-37073 Gottingen, Germany
[3] CERN, Isolde Collaborat, CH-1211 Geneva 23, Switzerland
关键词
D O I
10.1016/S0168-583X(01)01278-2
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The implantation sites of rare earth (RE) probes Ce-141 (t(1/2) = 32 d) and Gd-149 (t(1/2) = 9.28 d) in diamond have been investigated using the emission channeling (EC) technique. Parent isotopes Cs-141 and Dy-149 were implanted into type IIa diamond samples at an energy of 60 keV at the online isotope separator ISOLDE at CERN. Cs-141 decays through the chain Cs-141-Ba-141-La-141-Ce-141-Pr-141. EC measurements were made on the 102 keV conversion electrons emitted in the decay of Pr-141 to its ground state. The decay of Dy-149 follows the chain Dy-149-Tb-149-Gd-149-Eu-149-(149) Sm. EC measurements were made on the 101 keV electrons emitted in the decay of Eu-149. Two-dimensional channeling patterns of the conversion electrons were obtained along <110> and <111> axial directions by raster scans with a Si surface barrier detector. Comparison of the observed patterns with simulated spectra show that in diamond 45-50% of the RE atoms are located near substitutional sites, unlike the case in Si. (C) 2002 Elsevier Science B.V. All rights reserved.
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收藏
页码:835 / 839
页数:5
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