Large-Chern-Number Quantum Anomalous Hall Effect in Thin-Film Topological Crystalline Insulators

被引：185

作者：

Fang, Chen ^{[1
,2
,4
]}

Gilbert, Matthew J. ^{[3
,4
]}

Bernevig, B. Andrei ^{[2
]}

机构：

[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA

[2] Princeton Univ, Dept Phys, Princeton, NJ 08544 USA

[3] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[4] Univ Illinois, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

来源：

PHYSICAL REVIEW LETTERS | 2014年 / 112卷 / 04期

基金：

美国国家科学基金会;

关键词：

LOW-TEMPERATURE; SNTE; REALIZATION; PBS;

D O I：

10.1103/PhysRevLett.112.046801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We theoretically predict that thin-film topological crystalline insulators can host various quantum anomalous Hall phases when doped by ferromagnetically ordered dopants. Any Chern number between +/-4 can, in principle, be reached as a result of the interplay between (a) the induced Zeeman field, depending on the magnetic doping concentration, (b) the structural distortion, either intrinsic or induced by a piezoelectric material through the proximity effect, and (c) the thickness of the thin film. We propose a heterostructure to realize quantum anomalous Hall phases with Chern numbers that can be tuned by electric fields.

引用

页数：5

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