In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growth

被引：4

作者：

Chikita, H. ^{[1
]}

Matsumura, R. ^{[1
]}

Tojo, Y. ^{[1
]}

Yokoyama, H. ^{[1
]}

Sadoh, T. ^{[1
]}

Miyao, M. ^{[1
]}

机构：

[1] Kyushu Univ, Dept Elect, Nishi Ku, Fukuoka 8190395, Japan

来源：

THIN SOLID FILMS | 2014年 / 557卷

关键词：

Ge; Ge-on-insulator; SiGe mixing-triggered rapid-melting growth; In-depth analysis; LIQUID-PHASE EPITAXY; CONDENSATION; JUNCTIONS; MOBILITY; SI;

D O I：

10.1016/j.tsf.2013.08.035

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-quality Ge-on-insulator (GOI) structures are essential to realize next-generation large-scale integrated circuits, where GOI is employed as active layers of functional devices, as well as buffer layers for epitaxial growth of functional materials. In line with this, in-depth analysis of crystallinity of rapid-melting-grown GOI is performed. Structural and electrical measurements combined with a thinning technique reveal that the crystallinity of GOI (500 nm thickness) is very high and uniform in-depth direction, where high hole mobility (similar to 1000 cm(2)/V s) is achieved throughout the grown layers. These findings open up a possibility of application of rapid-melting- grown GOI to various advanced functional devices. (c) 2013 Elsevier B. V. All rights reserved.

引用

页码：139 / 142

页数：4

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