Influence of laser deposition conditions on optical properties of silicon composite films

被引:0
作者
Indutnyi, IZ
Kaganovich, EB
Kudryavtsev, AA
Manoilov, EG
Svechnikov, GS
机构
来源
MICROELECTRONIC PACKAGING AND LASER PROCESSING | 1997年 / 3184卷
关键词
laser; deposition; silicon; visible photoluminescence;
D O I
10.1117/12.280577
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper the main optical properties of Si nanocrystalline films prepared by pulse laser deposition of Si in N-2 or He atmosphere were reviewed. Both reflectance and transmission spectra were measured in the range of 200 -1200nm and were used for calculation of films optical constants. It has been shown that films have composite structure and contain Si nanocrystallites in SiOxNy matrix. Obtained visible photoluminescence of these films is related to quantum confinement in Si dots.
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页码:221 / 224
页数:4
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