Kinetics of Chemical Changes in Phenol Formaldehyde Based Polymeric Films Etched in N2O and O2 Inductively Coupled Plasmas: A Comparative Study

被引：5

作者：

Kwon, Kwang-Ho ^{[1
]}

Min, Nam-Ki ^{[1
]}

Kang, Seung-Youl ^{[2
]}

Baek, Kyu-Ha ^{[2
]}

Suh, Kyung Soo ^{[2
]}

Shutov, Dmitriy Alexandrovich ^{[3
]}

机构：

[1] Korea Univ, Dept Control & Instrumentat Engn, Jochiwon 339700, Chungnam, South Korea

[2] ETRI, IT Convergence & Components Lab, Taejon 305700, South Korea

[3] Ivanovo State Univ Chem & Technol, Dept Elect Devices & Mat Technol, Ivanovo 153000, Russia

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 08期

关键词：

ETCHING MECHANISM; OXYGEN; DAMAGE;

D O I：

10.1143/JJAP.48.08HA02

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper reports on investigation of surface chemistry and etch rates of phenol formaldehyde based polymer after N2O and O-2 radio frequency (RF) inductively coupled plasma processing depend on exposure time. By using X-ray photoelectron spectroscopy, it was shown that oxygen and nitrogen oxide plasma expositions both lead to similar changes in the chemical composition of polymer. The nitrogen oxide plasma does not lead to any significant increase of concentration of nitrogen-containing groups on the polymer. It was confirmed that the mechanism of photoresist destruction in the N2O discharge was generally identical to that in the O-2 plasma. Furthermore, the surface interactions with the polymer of nitrogen-containing active species could be neglected. (C) 2009 The Japan Society of Applied Physics

引用

页码：08HA021 / 08HA024

页数：4

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