Deep Trench Capacitors in Silicon Interconnect Fabric

被引:12
作者
Kannan, K. T. [1 ]
Iyer, Subramanian S. [1 ]
机构
[1] Univ Calif Los Angeles, Dept Elect & Comp Engn, CHIPS, Los Angeles, CA 90025 USA
来源
2020 IEEE 70TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2020) | 2020年
关键词
Si-IF; decaps; deep trench capacitors; power delivery network; impedance spectrum; DECOUPLING CAPACITORS;
D O I
10.1109/ECTC32862.2020.00358
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Silicon interconnect fabric (Si-IF) technology is a PCB replacement, fine pitch heterogeneous integration platform that enables high package density by supporting dielet assembly at small inter-dielet spacing. Electrical analysis of a back-side power delivery architecture for Si-IF is performed in this paper. To extend the frequency range of operation of the power delivery network (PDN), decoupling capacitors need to be used, which are implemented in Si-IF as deep trench capacitors (DTCAPs). DTCAPs with high specific cap density greater than fF/mu m(2), low effective series resistance (<= 1 m Omega), break down voltage greater than typical operating voltage, and process flow compatible for integration in Si-IF is targeted. Fabrication and experimental characterization of DTCAPs in Si-IF is currently a work in progress. Some early fabrication results are presented.
引用
收藏
页码:2295 / 2301
页数:7
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