Modeling of frequency dependent losses in two-port and three-port inductors on silicon

被引：13

作者：

Kamgaing, T ^{[1
]}

Myers, T ^{[1
]}

Petras, M ^{[1
]}

Miller, M ^{[1
]}

机构：

[1] Motorola SPS, Tempe, AZ 85284 USA

来源：

2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2002年

关键词：

D O I：

10.1109/MWSYM.2002.1011582

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

New compact model forms for two-port and three-port symmetric inductors fabricated on silicon are discussed in this paper. These new models incorporate a frequency independent RL network that mimics the skin effect behavior of transmission lines on conductive substrates and can accurately predict the inductive behavior as well as the one-port single-ended and the one-port differential Q of these devices at microwave and millimeter wave frequencies. The new models are validated on inductors fabricated in a thick plated copper process.

引用

页码：153 / 156

页数：4