W-gated trench power MOSFET (WFET)

被引：6

作者：

Darwish, M ^{[1
]}

Yue, C ^{[1
]}

Lui, KH ^{[1
]}

Giles, F ^{[1
]}

Chan, B ^{[1
]}

Chen, KI ^{[1
]}

Pattanayak, D ^{[1
]}

Chen, Q ^{[1
]}

Terrill, K ^{[1
]}

Owyang, K ^{[1
]}

机构：

[1] Siliconix, Santa Clara, CA 95054 USA

来源：

IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 2004年 / 151卷 / 03期

关键词：

D O I：

10.1049/ip-cds:20040445

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A W-shaped-gate power trench MOSFET (WFET) that demonstrates a significant reduction in gate-drain charge Q(gd), a low on-resistance and good production process margin is presented. The gate is formed using a thicker oxide, self-aligned to the P-body/N-epi junction at the bottom of the trench. Fabricated 35 V N-channel devices exhibit a r(DS(on)*)Q(gd) figure of merit of 12.5 mOmega.nC with V-GS = 10 V and V-DD = 15 V. Experimental data of devices fabricated using LOCOS and sub-atmospheric CVD (SACVD) processes to form the thicker oxide layer are reported along with simulation results.

引用

页码：238 / 242

页数：5