Growth Mechanism and Kinetics of Siliconizing of AISI D2 Tool Steel

被引:4
作者
Najafizadeh, Mojtaba [1 ]
Hosseinzadeh, Morteza [2 ]
Ghasempour-Mouziraji, Mehran [3 ,4 ]
Bozorg, Mansoor [5 ]
Perrone, Angelo [6 ]
Cavaliere, Pasquale [6 ]
机构
[1] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R China
[2] Islamic Azad Univ Ayatolah Amoli, Dept Engn, Amol, Iran
[3] Univ Aveiro, Sch Design Management & Prod Technol, EMaRT Grp, Estr Cercal 449, P-3720509 Oliveira De Azemeis, Portugal
[4] Univ Aveiro, TEMA Ctr Mech Technol & Automat, Aveiro, Portugal
[5] Shahrood Univ Technol, Dept Chem & Mat Engn, Shahrood 3619995161, Iran
[6] Univ Salento, Dept Innovat Engn, Via Arnesano, I-73100 Lecce, Italy
关键词
Coating; Siliconizing; Kinetics; Diffusion; Activation energy; SILICIDE COATINGS; ALLOY; SI; MICROSTRUCTURE; TEMPERATURE; OXIDATION; BEHAVIOR; LAYER; AL;
D O I
10.1007/s12633-022-01871-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The present paper goes into details of the kinetics of silicide layer growth on AISI D2 during surface siliconizing. Pack cementation was employed in order to siliconize the steel surface. Siliconizing was conducted by using powder mixtures Si 12 wt.% + NH4Cl 0.5 wt.% + Al2O3 at 923, 1073 and 1223 K for 2 to 6 h, respectively. Thermodynamic calculations showed that growth mechanisms of the coating comprise many different chemical reactions. The microstructure and silicides precipitation evolution were analyzed through scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction analysis (XRD). The silicides layers thickness falls in the range 32-154 mu m. The coatings hardness varied between 750 and 800 HV, being dependent on the process parameters. The kinetics measurement revealed the growth of the FeSi, Fe2Si and FeSi2 sub-layers as a function of treatment time and temperature. The results illustrated that the diffusion coefficient (k) increased with the treatment temperature. Activation energy (Q) was calculated as 788.83 kJ.mol(-1). The crystal growth rate resistance (K) ranged from 5.2 x 10(-9) to 3.1 x 10(-8) cm(2).s(-1).
引用
收藏
页码:11395 / 11403
页数:9
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