Micropatterned Single-Walled Carbon Nanotube Electrodes for Use in High-Performance Transistors and Inverters

We demonstrated the solution-processed single-walled carbon nanotube (SWNT) source-drain electrodes patterned using a plasma-enhanced detachment patterning method for high-performance organic transistors and inverters The high-resolution SWNT electrode patterning began with the formation of highly uniform SWNT thin films on a patterns were then formed by modulating the interfacial hydrophobic silanized substrate. The SWNT source-drain energies of the prepatterned elastomeric mold and the SWNT thin film using oxygen plasma. The SWNT films were subsequently selectively delaminated using a rubber mold. The patterned SWNTs could be used as the source drain electrodes for both n-type PTCDI-C8 and p-type pentacene field-effect transistors (FETs). The n- and p-type devices exhibited good and exactly matched electrical performances, with a field-effect mobility of around 0.15 cm(2) V-1 s(-1) and an ON/OFF current ratio exceeding 10(6). The single electrode material was used for both the n and p channels, permitting the successful fabrication of a high-performance complementary inverter by connecting a p-type pentacene FET to an n-type PTCDI-C8 FET. This patterning technique was simple, inexpensive, and easily scaled for the preparation of large-area electrode micropattems for flexible microelectronic device fabrication.