A reliable method for extraction of material parameters in terahertz time-domain spectroscopy

被引:896
作者
Duvillaret, L
Garet, F
Coutaz, JL
机构
[1] Lab. d'Hyperfrequences C., Université de Savoie
[2] University of Paris XI, Orsay
[3] Lab. Microwaves and Characterization, University of Savoy, Chambéry
关键词
D O I
10.1109/2944.571775
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper introduces a never method that allows fast and reliable extraction of material parameters in terahertz time-domain spectroscopy, This method could be applied for most of materials and requires neither simplifying assumptions nor samples of different thickness for the extraction, The presented extraction procedure operates either on truncated terahertz signals when temporal windowing is possible, or on full ones otherwise. Some experimental examples covering all practical cases are given, In particular, the extraction procedure treats the tedious case of samples for which internal reflections of the terahertz pulse slightly overlap.
引用
收藏
页码:739 / 746
页数:8
相关论文
共 13 条
[1]  
CHOSSAT M, AIDE MEMOIRE MATH IN, P20
[2]   TERAHERTZ BEAMS [J].
FATTINGER, C ;
GRISCHKOWSKY, D .
APPLIED PHYSICS LETTERS, 1989, 54 (06) :490-492
[3]   FAR-INFRARED TIME-DOMAIN SPECTROSCOPY WITH TERAHERTZ BEAMS OF DIELECTRICS AND SEMICONDUCTORS [J].
GRISCHKOWSKY, D ;
KEIDING, S ;
VANEXTER, M ;
FATTINGER, C .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1990, 7 (10) :2006-2015
[4]   RADIATION-PATTERNS FROM LENS-COUPLED TERAHERTZ ANTENNAS [J].
JEPSEN, PU ;
KEIDING, SR .
OPTICS LETTERS, 1995, 20 (08) :807-809
[5]   STRUCTURE AND CARRIER LIFETIME IN LT-GAAS [J].
LILIENTALWEBER, Z ;
CHENG, HJ ;
GUPTA, S ;
WHITAKER, J ;
NICHOLS, K ;
SMITH, FW .
JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (12) :1465-1469
[6]   THZ TIME-DOMAIN SPECTROSCOPY OF NONPOLAR LIQUIDS [J].
PEDERSEN, JE ;
KEIDING, SR .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (10) :2518-2522
[7]  
PRESS WH, NUMERICAL RECIPES PA, P270
[8]  
PRESS WH, NUMERICAL RECIPES PA, P309
[9]  
Robertson W. M., 1991, IEEE Microwave and Guided Wave Letters, V1, P371, DOI 10.1109/75.103854
[10]   OPTICAL AND ELECTRONIC-PROPERTIES OF DOPED SILICON FROM 0.1 TO 2 THZ [J].
VANEXTER, M ;
GRISCHKOWSKY, D .
APPLIED PHYSICS LETTERS, 1990, 56 (17) :1694-1696