Optical properties of GaSb-based type II quantum wells as the active region of midinfrared interband cascade lasers for gas sensing applications

被引：25

作者：

Motyka, M. ^{[1
]}

Sek, G. ^{[1
]}

Ryczko, K. ^{[1
]}

Misiewicz, J. ^{[1
]}

Lehnhardt, T. ^{[2
]}

Hoefling, S. ^{[2
]}

Forchel, A. ^{[2
]}

机构：

[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

[2] Univ Wurzburg, Dept Appl Phys, D-97074 Wurzburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 25期

关键词：

aluminium compounds; gallium compounds; gas sensors; III-V semiconductors; indium compounds; k; p calculations; photoluminescence; photoreflectance; semiconductor quantum wells; CONTINUOUS-WAVE OPERATION; SEMICONDUCTORS; GAINAS/GAAS; TRANSITIONS;

D O I：

10.1063/1.3157910

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoreflectance and photoluminescence, supported by the energy level calculations in the eight-band k center dot p model including strain, have been used to study the optical properties of GaSb/AlSb/InAs/InGaSb/AlSb/GaSb type II quantum wells (QWs). The broad emission wavelength tunability in the midinfrared range has been demonstrated by the control of InAs layer thickness. The temperature dependent measurements have shown that the emission can still be efficient at room temperature in such structures, and that the temperature shift of the fundamental type II optical transition between 10 and 300 K can be significantly smaller than for type I QW systems.

引用

页数：3

共 28 条

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