Engineering Oxygen Vacancy of Tunnel Barrier and Switching Layer for Both Selectivity and Reliability of Selector-Less ReRAM

被引：19

作者：

Lee, Sangheon ^{[1
]}

Lee, Daeseok ^{[1
]}

Woo, Jiyong ^{[1
]}

Cha, Euijun ^{[1
]}

Park, Jaesung ^{[1
]}

Hwang, Hyunsang ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 10期

关键词：

ReRAM; reliability; selectivity;

D O I：

10.1109/LED.2014.2347925

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The resistive switching behaviors of selector-less resistive random access memory (ReRAM) have been extensively investigated to eliminate the tradeoff between selectivity and reliability. To achieve excellent selectivity, reliability should be sacrificed, and vice versa. The reason for this tradeoff is the narrow read operation margin of ReRAM having high selectivity. Therefore, the role of each layer has been analyzed and engineered to satisfy both selectivity and reliability requirements of the ReRAM. In the selector-less ReRAM, oxygen vacancies of the switching layer control set voltage for achieving high read operation margin, whereas oxygen vacancies of the tunnel barrier control selectivity.

引用

页码：1022 / 1024

页数：3

共 9 条

[1]

[Anonymous], P IEEE INT EL DEV M

[2] Metallic filament formation by aligned oxygen vacancies in ZnO-based resistive switches [J].

Gu, Tingkun .

JOURNAL OF APPLIED PHYSICS, 2014, 115 (20)

[3]

Hyung Dong Lee, 2012, 2012 IEEE Symposium on VLSI Technology, P151, DOI 10.1109/VLSIT.2012.6242506

[4]

Jiyong Woo, 2013, 2013 Symposium on VLSI Technology, pT168

[5]

Jung Jongwan, 2008, JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, V8, P32

[6] Defect Engineering Using Bilayer Structure in Filament-Type RRAM [J].

Lee, Daeseok ;

Woo, Jiyong ;

Cha, Euijun ;

Park, Sangsu ;

Lee, Sangheon ;

Park, Jaesung ;

Hwang, Hyunsang .

IEEE ELECTRON DEVICE LETTERS, 2013, 34 (10) :1250-1252

[7]

Lee MJ, 2012, 2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)

[8] Nanoionics-based resistive switching memories [J].

Waser, RaineR ;

Aono, Masakazu .

NATURE MATERIALS, 2007, 6 (11) :833-840

[9] Trap-assisted tunneling current through ultra-thin oxide [J].

Wu, J ;

Rosenbaum, E .

1999 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 37TH ANNUAL, 1999, :389-395

← 1 →