Dielectrophoresis of graphene oxide nanostructures for hydrogen gas sensor at room temperature

被引:70
|
作者
Wang, Jianwei [1 ,2 ]
Singh, Budhi [1 ,2 ]
Park, Jin-Hyung [1 ,2 ]
Rathi, Servin [1 ,2 ]
Lee, In-yeal [1 ,2 ]
Maeng, Sunglyul [3 ]
Joh, Han-Ik [4 ]
Lee, Cheol-Ho [4 ]
Kim, Gil-Ho [1 ,2 ]
机构
[1] Sungkyunkwan Univ, Sungkyunkwan Adv Inst Nanotechnol SAINT, Samsung SKKU Graphene Ctr, Suwon 440746, South Korea
[2] Sungkyunkwan Univ, Sch Elect & Elect Engn, Suwon 440746, South Korea
[3] Woosuk Univ, Dept Elect & Elect Engn, Wonju 565701, Jeollabuk Do, South Korea
[4] Korea Inst Sci & Technol, Inst Adv Composite Mat, Bongdong Eup 565902, Jeollabukdo, South Korea
来源
SENSORS AND ACTUATORS B-CHEMICAL | 2014年 / 194卷
基金
新加坡国家研究基金会;
关键词
Graphene oxide; Dielectrophoresis; Hydrogen gas sensor; CARBON NANOTUBES; THIN-FILMS; NANOPARTICLES; REDUCTION;
D O I
10.1016/j.snb.2013.12.009
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Hydrogen gas sensors based on graphene oxide (GO) nanostructures have been fabricated using ac dielectrophoresis (DEP) process. The GO nanostructures synthesized by an improved Hummer's method were first characterized by atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy. GO nanostructures were assembled into gold electrodes using DEP process by varying parameters such as frequency, peak-to-peak voltage (V-pp), and processing time (t). The devices were investigated by scanning electron microscopy, current-voltage measurement, and hydrogen sensing experiment at room temperature. It was found that the optimum DEP parameters that manipulates GO nanostructures in precise manner for hydrogen gas sensing were V-pp = 10 V, frequency = 500 kHz, and t = 30 s. The optimized device was proved to be an effective and better hydrogen gas sensor over a typical drop-dried device with a good sensing response of 5%, fast response time (<90 s), and fast recovery time (<60 s) for 100 ppm hydrogen gas concentration at room temperature. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:296 / 302
页数:7
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