Interfacial structure of epitaxial MgB2 thin films grown on (0001) sapphire

被引：35

作者：

Tian, W

Pan, XQ ^{[1
]}

Bu, SD

Kim, DM

Choi, JH

Patnaik, S

Eom, CB

机构：

[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

[2] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 04期

关键词：

D O I：

10.1063/1.1489101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The microstructure and interfacial atomic structure of MgB2 thin films fabricated on the (0001) Al2O3 substrate were characterized by transmission electron microscopy. It was found that the MgB2 films grow epitaxially on the substrate with an orientation relationship with respect to the substrate as: (0001)MgB(2)parallel to(0001)Al2O3 and [11 (2) over bar0]MgB(2)parallel to[10 (1) over bar0]Al2O3. At the film/substrate interface, both MgO and MgAl2O4 phases were observed, which also grow epitaxially on the (0001) Al2O3 substrate. The formation of these intermediate phases is ascribed to the existence of oxygen during the annealing. (C) 2002 American Institute of Physics.

引用

页码：685 / 687

页数：3

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