Microwave I-Q vector modulator using a simple technique for compensation of FET parasitics

被引:15
作者
Chongcheawchamnan, M [1 ]
Bunnjaweht, S
Kpogla, D
Lee, D
Robertson, ID
机构
[1] Univ Surrey, Sch Elect Engn, Surrey, England
[2] Univ Surrey, Dept Math, Surrey, England
[3] Nextec Microwave & RF Inc, Santa Clara, CA 95050 USA
关键词
cold FET; parasitic elements; vector modulator;
D O I
10.1109/TMTT.2002.1006428
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The analysis and design of an improved technique for the realization of vector modulators using analog reflection-type circuits are presented. The analysis focuses on the detrimental effect that the parasitic elements of the FET variable-resistance elements have on the 360degrees phase and amplitude control. It is shown that a simple circuit technique can be used to compensate for the parasitic effects and achieve a near-ideal constellation. Compared with the balanced structure, the proposed technique leads to a much smaller circuit area and does not require additional complementary control signals. This makes it better suited to commercial wireless applications where low cost is paramount. Simulation and experimental results for an L-band prototype are presented.
引用
收藏
页码:1642 / 1646
页数:5
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