4H-SiC rectifiers with dual metal planar Schottky contacts

被引：20
作者：
Vassilevski, KV [1 ]
Horsfall, AB
Johnson, CM
Wright, NG
O'Neill, AG
机构：
[1] Univ Newcastle Upon Tyne, Dept Elect & Elect Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
[2] Univ Newcastle Upon Tyne, Dept Elect & Elect Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 05期
关键词：
barrier height; dual metal contact; nickel; on/off current ratio; planar; Schottky diode; titanium;
D O I：
10.1109/16.998610
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
4H-SiC rectifiers with dual metal planar (DMP) Schottky contacts have been fabricated with a main titanium and an annular nickel contact. Fabricated diodes display low reverse leakage currents and low forward barrier heights. The diodes exhibited a high on/off current ratio (at 1 V/-500 V) exceeding 5.10(8).
引用
收藏
页码：947 / 949
页数：3
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