Prediction of solar cell degradation in space from the electron-proton equivalence

被引:31
作者
Mbarki, M
Sun, GC
Bourgoin, JC
机构
[1] Univ Paris 06, Lab Milieux Desordonnes & Heterogenes, F-75015 Paris, France
[2] GESEC R&D, F-77210 Avon, France
关键词
D O I
10.1088/0268-1242/19/9/002
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
From a comparison between the degradation rates, induced by proton and electron irradiations, of the performances of GaAs quantum well based vertical cavity surface emitting laser, we deduce a coefficient of equivalence between the two types of irradiations. This coefficient allows us to calculate the fluence of protons of a given energy which produces the same degradation as a fluence of electrons of a standard energy. We apply the result of this analysis to the degradation of GaAs solar cells, demonstrating that this coefficient allows a quantitative prediction of the degradation induced by a proton irradiation, when the degradation induced by electrons at one energy is known.
引用
收藏
页码:1081 / 1085
页数:5
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