The effect of electrical stress on the leakage current of polycrystalline Si thin-film transistors fabricated by metal-induced lateral crystallization

被引：6

作者：

Yoon, YG ^{[1
]}

Kim, GB ^{[1
]}

Kim, TK ^{[1
]}

Lee, BI ^{[1
]}

Joo, SK ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Res Inst Adv Mat, Seoul 151742, South Korea

来源：

THIN SOLID FILMS | 2004年 / 466卷 / 1-2期

关键词：

polycrystalline Si; thin-film transistors; metal-induced lateral crystallization; electrical stress;

D O I：

10.1016/j.tsf.2004.02.037

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of electrical stress on the leakage current of polycrystalline Si (poly-Si) thin-film transistors (TFTs) fabricated by metal-induced lateral crystallization (MILC) were investigated. It was found that the leakage current of MILC TFTs could be reduced by electrical stress (V-G<0, V-D>0) and this effect was saturated in about 1000 s. In addition, asymmetric Ni-offset deposition is proposed. By this method, the boundary where the two MILC regions meet can be moved out of the channel region, consequently, resulting in a great reduction in leakage current and in an insensibility to electrical stress. (C) 2004 Published by Elsevier B.V.

引用

页码：303 / 306

页数：4

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