Performance Improvement of N-Type TiOx Active-Channel TFTs Grown by Low-Temperature Plasma-Enhanced ALD

被引：26

作者：

Park, Jae-Woo ^{[1
]}

Lee, Dongyun ^{[1
]}

Kwon, Hakyoung ^{[2
]}

Yoo, Seunghyup ^{[1
]}

Huh, Jongmoo ^{[3
]}

机构：

[1] Korea Adv Inst Sci & Technol, Sch Elect Engn & Comp Sci, Taejon 305701, South Korea

[2] ASM GK Ltd, Cheonan 330816, South Korea

[3] Samsung Elect Ltd, Yongin 446711, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 07期

关键词：

Plasma-enhanced atomic layer deposition (PEALD); thin-film transistor (TFT); titanium oxide (TiOx); THIN-FILM TRANSISTORS;

D O I：

10.1109/LED.2009.2021587

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on performance improvement of n-type oxide-semiconductor thin-film transistors (TFTs) based on TiOx active channels grown at 250 degrees C by plasma-enhanced atomic layer deposition. TFTs with as-grown TiOx films exhibited the saturation mobility (mu(sat)) as high as 3.2 cm(2)/V . s but suffered from the low on-off ratio (I-ON/I-OFF) of 2.0 x 10(2). N2O plasma treatment was then attempted to improve I-ON/I-OFF. Upon treatment, the TiOx TFTs exhibited I-ON/I-OFF of 4.7 x 10(5) and mu(sat) of 1.64 cm(2) /V . s, showing a much improved performance balance and, thus, demonstrating their potentials for a wide variety of applications such as backplane technology in active-matrix displays and radio-frequency identification tags.

引用

页码：739 / 741

页数：3

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