First-Principles Study on Electronic and Optical Properties of Graphene-Like Boron Phosphide Sheets

被引:83
作者
Wang, Shao-feng [1 ,2 ]
Wu, Xiao-jun [1 ,2 ,3 ,4 ,5 ]
机构
[1] Chinese Acad Sci, Key Lab Mat Energy Convers, Hefei 230026, Peoples R China
[2] Univ Sci & Technol China, Dept Mat Sci & Engn, Hefei 230026, Peoples R China
[3] Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Peoples R China
[4] Univ Sci & Technol China, Sch Chem & Mat Sci, Hefei 230026, Peoples R China
[5] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China
基金
中国国家自然科学基金;
关键词
Density functional theory; BP sheet; Electronic structure; Optical properties; ELASTIC PROPERTIES; MOBILITY; TRANSPORT; BANDGAP; PHOSPHORENE; PREDICTION; SILICENE; STRAIN; CARBON; MOS2;
D O I
10.1063/1674-0068/28/cjcp1505100
中图分类号
O64 [物理化学(理论化学)、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号
070203 ; 070304 ; 081704 ; 1406 ;
摘要
Two-dimensional semiconducting materials with moderate band gap and high carrier mobility have a wide range of applications for electronics and optoelectronics in nanoscale. On the basis of first-principles calculations, we perform a comprehensive study on the electronics and optical properties of graphene-like boron phosphide (BP) sheets. The global structure search and first-principles based molecular dynamic simulation indicate that two-dimensional BP sheet has a graphene-like global minimum structure with high stability. BE monolayer is semiconductor with a direct band gap of 1.37 eV, which reduces with the number of layers. Moreover, the band gaps of BP sheets are insensitive to the applied uniaxial strain. The calculated mobility of electrons in BP monolayer is as high as 106 cm(2)/(V.s). Lastly, the MoS2/BP van der Waals heterobilayers are investigated for photovoltaic applications, and their power conversion efficiencies are estimated to be in the range of 17.7%-19.7%. This study implies the potential applications of graphene-like BP sheets for electronic and optoelectronic devices in nanoscale.
引用
收藏
页码:588 / 594
页数:7
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