Methodological Issues in First-Principle Calculations of CH3NH3PbI3 Perovskite Surfaces: Quantum Confinement and Thermal Motion

被引:12
作者
Lodeiro, Lucas [2 ]
Barria-Caceres, Felipe [1 ]
Jimenez, Karla [1 ]
Contreras, Renato [2 ]
Montero-Alejo, Ana L. [3 ]
Menendez-Proupin, Eduardo [1 ]
机构
[1] Univ Chile, Fac Ciencias, Dept Fis, Santiago 7800003, Chile
[2] Univ Chile, Fac Ciencias, Dept Quim, Santiago 7800003, Chile
[3] Univ Tecnol Metropolitana, Dept Fis, Fac Ciencias Nat Matemat & Medio Ambiente FCNMM, Santiago 7800002, Chile
来源
ACS OMEGA | 2020年 / 5卷 / 45期
关键词
TOTAL-ENERGY CALCULATIONS; ELECTRONIC-PROPERTIES; HALIDE PEROVSKITES; ATOMIC-STRUCTURE; BAND OFFSETS; LEAD; TERMINATION; ALIGNMENT;
D O I
10.1021/acsomega.0c04420
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Characterization and control of surfaces and interfaces are critical for photovoltaic and photocatalytic applications. In this work, we propose CH3NH3PbI3 (MAPI) perovskite slab models whose energy levels, free of quantum confinement, explicitly consider the spin-orbit coupling and thermal motion. We detail methodological tools based on the density functional theory that allow achieving these models at an affordable computational cost, and analytical corrections are proposed to correct these effects in other systems. The electronic state energies with respect to the vacuum of the static MAPI surface models, terminated in PbI2 and MAI atomic layers, are in agreement with the experimental data. The PbI2 -terminated slab has in-gap surface states, which are independent of the thickness of the slab and also of the orientation of the cation on the surface. The surface states are not useful for alignments in photovoltaic devices, while they could be useful for photocatalytic reactions. The energy levels calculated for the MAI-terminated surface coincide with the widely used values to estimate the MAPI alignment with the charge transport materials, i.e., -5.4 and -3.9 eV for valence band maximum and conduction band minimum, respectively. Our study offers these slab models to provide guidelines for optimal interface engineering.
引用
收藏
页码:29477 / 29491
页数:15
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