Antiferromagnetic transition in epitaxial strained La2CuO4 thin films

被引:2
作者
Suter, A [1 ]
Locquet, JP
Morenzoni, E
Prokscha, T
Eshchenko, DG
Garifianov, N
Khasanov, R
Luetkens, H
Seo, JW
机构
[1] Paul Scherrer Inst, Lab Muon Spin Spect, CH-5232 Villigen, Switzerland
[2] IBM Corp, Div Res, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland
[3] Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland
[4] Kazan Phys Tech Inst, Kazan 420029, Russia
[5] Tech Univ Carolo Wilhelmina Braunschweig, Inst Met Phys & Nukl Festkorperphys, D-38106 Braunschweig, Germany
[6] EPFL, LNNME, CH-1015 Lausanne, Switzerland
关键词
strained antiferromagnet; low-energy mu SR; high-temperature superconductor; thin film magnetism;
D O I
10.1016/j.jmmm.2003.11.048
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Low-energy muSR experiments were carried out on epitaxial strained La2CuO4 thin films of a thickness of only 12 nm. We could determine magnetic transitions at T-N = 174(3) K for La2CuO4 on SrLaAlO4 and T-N = 168(2) K for La2CuO4 on SrTiO3. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:110 / 111
页数:2
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