Effects of Annealing Temperature on Magnetic Properties of Co Thin Films on Si (100)

被引：3

作者：

Wang, Kai ^{[1
]}

Zhao, Yue ^{[1
]}

Li, Guojian ^{[1
]}

Wu, Chun ^{[1
]}

Wang, Qiang ^{[1
]}

He, Jicheng ^{[1
]}

机构：

[1] Northeastern Univ, Key Lab Electromagnet Proc Mat, Minist Educ, Shenyang 110819, Peoples R China

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2015年 / 51卷 / 11期

基金：

中国国家自然科学基金;

关键词：

Co silicide; magnetic properties; surface structure; thin films; SILICIDE FORMATION; SI(100); FIELD; DIFFUSION; BEHAVIOR;

D O I：

10.1109/TMAG.2015.2427296

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of silicide formation on the surface structure and magnetic properties of Co thin films on Si (100) were investigated. Annealing temperature significantly changed the formation of silicide. CoSi phase was formed during annealing at 600 degrees C and 700 degrees C. CoSi2 phase was formed during annealing at 800 degrees C. The anisotropy of Co/Si (100) films changed due to the formation of silicide. In addition, both the particle size and the surface roughness increased with the increase of annealing temperature, which led to the increase of coercivity up to 700 degrees C. However, the better crystallinity HC decreased at 800 degrees C.

引用

页数：4

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