Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si(100)

被引：13

作者：

Chaudhuri, Ayan Roy ^{[1
]}

Fissel, A. ^{[2
]}

Osten, H. J. ^{[1
]}

机构：

[1] Leibniz Univ Hannover, Inst Elect Mat & Devices, D-30167 Hannover, Germany

[2] Leibniz Univ Hannover, Informat Technol Lab, D-30167 Hannover, Germany

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 01期

关键词：

HIGH-K DIELECTRICS; 2-DIMENSIONAL ELECTRON; PRASEODYMIUM OXIDE; EPITAXIAL-GROWTH; CRYSTALLINE OXIDES; SILICON; INTERFACE; SI(001); ENHANCEMENT; THICKNESS;

D O I：

10.1063/1.4861470

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report about the single crystalline growth and dielectric properties of Gd2O3(100) thin films on Si(100) surface. Using a two step molecular beam epitaxy growth process, we demonstrate that controlled engineering of the oxide/Si interface is a key step to achieve the atypical (100) oriented growth of Gd2O3. Unusually, high dielectric constant values (similar to 23-27) were extracted from capacitance voltage measurements. Such effect can be understood in terms of a two dimensional charge layer at the Gd2O3/Si interface (W. Sitaputra and R. Tsu, Appl. Phys. Lett. 101, 222903 (2012)) which can influence the dielectric properties of the oxide layer by forming an additional negative quantum capacitance. (C) 2014 AIP Publishing LLC.

引用

页数：5

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