Structural and gas sensing properties of ex-situ oxidized Sn grown by thermal evaporation

被引：7

作者：

Amutha, A. ^{[1
]}

Amirthapandian, S. ^{[2
]}

Sundaravel, B. ^{[2
]}

Prasad, A. K. ^{[3
]}

Panigrahi, B. K. ^{[2
]}

Thangadurai, P. ^{[1
]}

机构：

[1] Pondicherry Univ, Ctr Nanosci & Technol, Kalapet 605014, Puducherry, India

[2] Indira Gandhi Ctr Atom Res, Div Mat Phys, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India

[3] Indira Gandhi Ctr Atom Res, Mat Sci Grp, Surface & Nanosci Div, Kalpakkam 603102, Tamil Nadu, India

来源：

APPLIED SURFACE SCIENCE | 2016年 / 360卷

关键词：

SnO2 thin films; GIXRD; Rutherford backscattering; Raman spectroscopy; Methane gas sensor; CATALYTIC-ACTIVITY; METAL-OXIDES; METHANE; SENSOR; TEMPERATURE; FILMS; LAYERS; STATE; SIZE;

D O I：

10.1016/j.apsusc.2015.11.054

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

SnO2 thin films were obtained by ex-situ oxidation of Sn metal film deposited by thermal evaporation. The oxidation of the Sn film was carried out at 600, 700 and 900 degrees C for 2 h in a controlled oxygen atmosphere. GIXRD confirmed the tetragonal rutile phase of SnO2 which was further confirmed by Raman spectroscopy. The RBS measurements provided the thickness and chemical information of the film. Thickness of the film was in the range of 6-12 nm and the presence of Sn and oxygen in the films are shown. Scanning electron microscopy revealed spherical particles of different sizes for films annealed at different temperatures. The SnO2 thin film oxidized at 900 degrees C was tested for methane gas sensing. A sensing response of 78.46% for 100 ppm of methane at an operating temperature of 100 degrees C which is one of lowest reported was obtained. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：731 / 737

页数：7

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