Design and Fabrication of 1160-nm Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser

被引：4

作者：

Zhang Zhuo ^{[1
,2
]}

Ning Yongqiang ^{[1
]}

Zhang Jianwei ^{[1
]}

Jiye, Zhang ^{[1
,2
]}

Zeng Yugang ^{[1
]}

Zhang Jun ^{[1
]}

Zhang Xing ^{[1
]}

Zhou Yinli ^{[1
]}

Huang Youwen ^{[1
]}

Qin Li ^{[1
]}

Liu Yun ^{[1
]}

Wang Lijun ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Jilin, Peoples R China

[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

来源：

CHINESE JOURNAL OF LASERS-ZHONGGUO JIGUANG | 2020年 / 47卷 / 07期

关键词：

laser physics; semiconductor laser; optically-pumped vertical-external-cavity surface-emitting semiconductor laser; gain chip; strain quantum well;

D O I：

10.3788/CJL202047.0701020

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In the medical field, the 1160-nm wavelength vertical-external-cavity surface-emitting semiconductor laser (VECSEL) is the fundamental frequency lasing source of orange laser. However, the strain accumulation effect induced by the high strain InGaAs quantum well in the luminous zone limits high output power. In this study, the secondary compensation method is proposed for a high strain InGaAs quantum well using the GaAsP material in a single luminescent zone to achieve high material growth quality of optical absorption layers. The structure of the absorption layer containing Al is designed to reduce the photogenic carrier-blocking effect caused by GaAsP barrier and improve the injection efficiency of photogenic carriers. The lasing wavelength and output power of the prepared VECSEI, devices arc 1160 nm and 1.02 W, respectively. The lasing spot shows symmetrical morphology, and the divergence angles of the spot at orthogonal directions arc 10.5 degrees and 11.9 degrees.

引用

页数：8

共 34 条

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