Effects of proton radiation on field limiting ring edge terminations in 4H-SiC junction barrier Schottky diodes

被引:1
|
作者
Song, QingWen [1 ,2 ]
Tang, XiaoYan [1 ,2 ]
Han, Chao [1 ,2 ]
Yuan, Hao [1 ,2 ]
Yang, Shuai [1 ,2 ]
He, XiaoNing [1 ,2 ]
Zhang, YiMeng [1 ,2 ]
Zhang, YiMen [1 ,2 ]
Zhang, YuMing [1 ,2 ]
机构
[1] Xidian Univ, Sch Microelect, Xian 710071, Shaanxi, Peoples R China
[2] State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Shaanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
4H-SiC; power device; edge termination; radiation effects;
D O I
10.1007/s11431-018-9394-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, the effects of high-energy proton radiation on the effectiveness of edge terminations using field limiting rings (FLRs) in 4H-SiC junction barrier Schottky (JBS) diodes were examined in detail. The devices were irradiated using 5-MeV protons at fluences ranging from 5x10(12) cm(-2) to 5x10(14) cm(-2). Further, the reverse breakdown performances of the investigated devices were measured both before and after irradiation. Proton irradiation initially decreased the breakdown voltage (BV); subsequently, the BV was increased as the proton fluence increased. At a fluence of 5x10(13) cm(-2), the BV was reduced by approximately 18%, whereas it was reduced by approximately 5% at a higher proton fluence of 5x10(14) cm(-2). The related degradation mechanism that was associated with this phenomenon was also investigated using the numerical simulations of the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the device. The main contribution to the radiation-induced changes in BV originates from the variations of charge distribution at the SiO2/4H-SiC interface and the reduction of the net carrier density in the drift region. Both the aforementioned variations affect the spread of the electric field in the FLR edge termination regions.
引用
收藏
页码:1210 / 1216
页数:7
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