Structural evolution of GaN nucleation layers during metal-organic chemical vapour deposition growth

被引：0
作者：
Degave, F
Ruterana, P
Nouet, G
Je, JH
Kim, CC
机构：
[1] Inst Sci Mat & Rayonnement, CRISMAT, ESCTM, F-14050 Caen, France
[2] Pohang Univ Sci & Engn, Dept Mat Sci & Engn, Pohang, South Korea
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 2001 | 2001年 / 169期
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中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
Low temperature nucleation of GaN on (0001) sapphire is investigated. Depositions were made for 20 s, 40 s, 60 s, 120 s and 180 s at 500degreesC by MOCVD. It is shown that the shortest deposition times give rise to the formation of small cubic crystallites. Subsequently, the density of nucleation islands increases, they grow in height and their shape is modified. They start to transform to wurtzite from the interface with the substrate. These results will be discussed in terms of the operating nucleation and growth mechanisms.
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页码：281 / 284
页数：4
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