Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation

被引：2

作者：

Atmaca, G. ^{[1
]}

Ardali, S. ^{[2
]}

Narin, P. ^{[1
]}

Kutlu, E. ^{[1
]}

Lisesivdin, S. B. ^{[1
]}

Malin, T. ^{[3
]}

Mansurov, V. ^{[3
]}

Zhuravlev, K. ^{[3
,4
]}

Tiras, E. ^{[2
]}

机构：

[1] Gazi Univ, Dept Phys, Fac Sci, TR-06500 Ankara, Turkey

[2] Anadolu Univ, Dept Phys, Fac Sci, TR-26470 Eskisehir, Turkey

[3] Russian Acad Sci, Siberian Branch, Inst Semicond Phys, Novosibirsk 630090, Russia

[4] Novosibirsk State Univ, Novosibirsk 630090, Russia

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2016年 / 659卷

关键词：

Surface passivation; GaN; Mobility; Energy relaxation; QUANTUM-WELLS; MOBILITY; GAN; SCATTERING; TRANSPORT; GAN/ALGAN; RATES;

D O I：

10.1016/j.jallcom.2015.11.056

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this study, energy relaxation mechanisms of electrons in AlGaN/AlN/GaN High Electron Mobility Transistor (HEMT) structures with and without in situ Si3N4 passivation were investigated. Although the physical parameters of the samples were all different, the electron-temperature dependent power loss values were found to be identical. The study also sought to fit the current theoretical power loss in the LO-phonon regime to the experimental power-loss per carrier results. The calculated power loss offered a reasonably fit to the experimental data in the electron temperature range between 75 and 250 K. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：90 / 94

页数：5

共 32 条

[1] The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation [J].