Skyrmion-Mediated Voltage-Controlled Switching of Ferromagnets for Reliable and Energy-Efficient Two-Terminal Memory

被引:27
作者
Bhattacharya, Dhritiman [1 ]
Atulasimha, Jayasimha [1 ,2 ]
机构
[1] Virginia Commonwealth Univ, Dept Mech & Nucl Engn, Richmond, VA 23284 USA
[2] Virginia Commonwealth Univ, Dept Elect & Comp Engn, Richmond, VA 23284 USA
基金
美国国家科学基金会;
关键词
VCMA; magnetization switching; DMI; skyrmions; micromagnetic simulations; ATOMIC LAYERS; MAGNETORESISTANCE; ELECTRONICS; REVERSAL; POWER;
D O I
10.1021/acsami.8b02791
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We propose a two-terminal nanomagnetic memory element based on magnetization reversal of a perpendicularly magnetized nanomagnet employing a unipolar voltage pulse that modifies the perpendicular anisotropy of the system. Our work demonstrates that the presence of Dzyaloshinskii-Moriya interaction can create an alternative route for magnetization reversal that obviates the need for utilizing precessional magnetization dynamics as well as a bias magnetic field that are employed in traditional voltage control of magnetic anisotropy (VCMA)-based switching of perpendicular magnetization. We show with extensive micromagnetic simulation, in the presence of thermal noise, that the proposed skyrmion-mediated VCMA switching mechanism room temperature leading to extremely low error switching while also being potentially 1-2 orders of magnitude more energy efficient than state-of-the-art spin transfer torque-based switching.
引用
收藏
页码:17455 / 17462
页数:8
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