Near-Infrared Electrophosphorescence up to 1.1 μm using a Thermally Activated Delayed Fluorescence Molecule as Triplet Sensitizer

被引:48
|
作者
Nagata, Ryo [1 ,2 ]
Nakanotani, Hajime [1 ,2 ,3 ,4 ]
Adachi, Chihaya [1 ,2 ,3 ,4 ]
机构
[1] Kyushu Univ, Ctr Organ Photon & Elect Res OPERA, Nishi Ku, 744 Motooka, Fukuoka 8190395, Japan
[2] Kyushu Univ, Dept Appl Chem, Nishi Ku, 744 Motooka, Fukuoka 8190395, Japan
[3] Kyushu Univ, Ctr Organ Photon & Elect Res OPERA, Adachi Mol Exciton Engn Project, JST,ERATO,Nishi Ku, 744 Motooka, Fukuoka 8190395, Japan
[4] Kyushu Univ, Int Inst Carbon Neutral Energy Res WPI I2CNER, Nishi Ku, 744 Motooka, Fukuoka 8190395, Japan
基金
日本科学技术振兴机构;
关键词
LIGHT-EMITTING-DIODES; HIGHLY EFFICIENT; PHOSPHORESCENCE; DEVICES; POLYMER;
D O I
10.1002/adma.201604265
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A tenfold improvement in the external electroluminescence quantum efficiency of NIR electrophosphorescence is demonstrated compared to devices with conventional fluorescent materials as host, by applying the concept of thermally activated delayed fluorescence to achieve an emitter layer capable of efficient spin conversion. This device architecture can maximize the performance of an organicsemiconductor-based NIR light source.
引用
收藏
页数:5
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