Optimized Toroidal Inductors Versus Planar Spiral Inductors in Multilayered Technologies

被引：20

作者：

Lopez-Villegas, J. M. ^{[1
]}

Vidal, N. ^{[1
]}

del Alamo, Jesus A. ^{[2
]}

机构：

[1] Univ Barcelona, Dept Elect, RF Grp, E-08028 Barcelona, Spain

[2] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2017年 / 65卷 / 02期

关键词：

Inductance calculation; inductor design; inductor selection rules; magnetic passive components; toroidal inductor; toroidal inductor optimization; RF INTEGRATED INDUCTORS; SILICON; DESIGN;

D O I：

10.1109/TMTT.2016.2645571

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper is aimed to compare the performance of toroidal inductors and planar spiral inductors in multilayered technologies, in terms of achievable inductance density. The optimization of planar toroidal inductors in multilayered substrates is investigated theoretically, and closed formulae are derived for their inductances as a function of geometrical parameters. The obtained model is validated by experimental results and electromagnetic simulation. From the comparison of the inductance of toroidal inductors and compact spiral inductors, a selection rule is proposed to choose the most suitable topology that leads to the most compact design.

引用

页码：423 / 431

页数：9

共 13 条

[1] A Technology Overview of the PowerChip Development Program [J].

Araghchini, Mohammad ;

Chen, Jun ;

Vicky Doan-Nguyen ;

Harburg, Daniel V. ;

Jin, Donghyun ;

Kim, Jungkwun ;

Kim, Min Soo ;

Lim, Seungbum ;

Lu, Bin ;

Piedra, Daniel ;

Qiu, Jizheng ;

Ranson, John ;

Sun, Min ;

Yu, Xuehong ;

Yun, Hongseok ;

Allen, Mark G. ;

del Alamo, Jesus A. ;

DesGroseilliers, Gary ;

Herrault, Florian ;

Lang, Jeffrey H. ;

Levey, Christopher G. ;

Murray, Christopher B. ;

Otten, David ;

Palacios, Tomas ;

Perreault, David J. ;

Sullivan, Charles R. .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2013, 28 (09) :4182-4201

[2] On the design of RF spiral inductors on silicon [J].

Burghartz, JN ;

Rejaei, B .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (03) :718-729

[3] RF circuit design aspects of spiral inductors on silicon [J].

Burghartz, JN ;

Edelstein, DC ;

Soyuer, M ;

Ainspan, HA ;

Jenkins, KA .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1998, 33 (12) :2028-2034

[4] A 1.8-GHz low-phase-noise CMOS VCO using optimized hollow spiral inductors [J].

Craninckx, J ;

Steyaert, MSJ .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1997, 32 (05) :736-744

[5] Improvement of the quality factor of RF integrated inductors by layout optimization [J].

López-Villegas, JM ;

Samitier, J ;

Cané, C ;

Losantos, P ;

Bausells, J .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2000, 48 (01) :76-83

[6]

Lopez-Villegas JM, 2016, IEEE RAD FREQ INTEGR, P55, DOI 10.1109/RFIC.2016.7508249

[7] Simple accurate expressions for planar spiral inductances [J].

Mohan, SS ;

Hershenson, MD ;

Boyd, SP ;

Lee, TH .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1999, 34 (10) :1419-1424

[8]

Murgatroyd P. N., 1988, P I ELECTR ENG, V135, P202

[9]

Pejtersen J., 2012, Proceedings of the 2012 IEEE 7th International Power Electronics and Motion Control Conference (ECCE 2012), P688, DOI 10.1109/IPEMC.2012.6258779

[10]

Perreault DJ, 2009, APPL POWER ELECT CO, P1, DOI 10.1109/APEC.2009.4802625

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