III-Nitride nanowire optoelectronics

被引：198

作者：

Zhao, Songrui ^{[1
]}

Nguyen, Hieu P. T. ^{[2
]}

Kibria, Md. G. ^{[1
]}

Mi, Zetian ^{[1
]}

机构：

[1] McGill Univ, Dept Elect & Comp Engn, 3480 Univ St, Montreal, PQ H3A 0E9, Canada

[2] New Jersey Inst Technol, Dept Elect & Comp Engn, Newark, NJ 07102 USA

来源：

PROGRESS IN QUANTUM ELECTRONICS | 2015年 / 44卷

基金：

加拿大自然科学与工程研究理事会;

关键词：

GaN; AlN; InN; Nanowire; Optoelectronics; LED; Laser; Solar cell; Photodetector; Solar fuel; Water splitting; Solar hydrogen; Photosynthesis; Si photonics; LIGHT-EMITTING-DIODES; SELECTIVE-AREA GROWTH; SURFACE-CHARGE PROPERTIES; SINGLE-PHOTON EMISSION; VAPOR-DEPOSITION ROUTE; MOLECULAR-BEAM EPITAXY; GALLIUM NITRIDE; GAN NANOWIRES; CATALYST-FREE; CORE-SHELL;

D O I：

10.1016/j.pquantelec.2015.11.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been intensively studied in the past decade. Unique to this material system is that its energy bandgap can be tuned from the deep ultraviolet (similar to 6.2 eV for AIN) to the near infrared (similar to 0.65 eV for InN). In this article, we provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices, including light emitting diodes, lasers, photodetectors, single photon sources, intraband devices, solar cells, and artificial photosynthesis. The present challenges and future prospects of III-nitride nanowire optoelectronic devices are also discussed. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：14 / 68

页数：55

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