Growth and properties of Co-doped TiO2 thin films grown on buffered Si substrate

被引:9
作者
Yang, HS [1 ]
Singh, RK [1 ]
机构
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
关键词
D O I
10.1063/1.1651799
中图分类号
O59 [应用物理学];
学科分类号
摘要
Epitaxial growth of a Co-doped anatase TiO2 thin film on silicon has been achieved by using SrTiO3/TiN bilayers as a buffer. All layers were sequentially formed by pulsed laser deposition. X-ray phi scan and selective area electron diffraction patterns revealed that SrTiO3/TiN buffer layers were grown with a cube-on-cube orientation relationship with silicon. Ferromagnetism was observed at room temperature with a coercivity of around 607 Oe. However, the ferromagnetism is attributed to the highly cobalt enriched TiO2 clusters which nucleate after a certain growth of film, as observed by atomic/magnetic force microscopy as well as cross-sectional transmission electron microscopy. (C) 2004 American Institute of Physics.
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页码:7192 / 7194
页数:3
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