Control of crystallographic orientation of LiNbO3 films grown by electron-cyclotron resonance plasma sputtering on TiN films

被引：12

作者：

Akazawa, H. ^{[1
]}

Shimada, M. ^{[1
]}

机构：

[1] NTT Corp, Microsyst Integrat Labs, Atsugi, Kanagawa 2430198, Japan

来源：

VACUUM | 2006年 / 80卷 / 07期

关键词：

LiNbO3; TiN; ECR sputtering; rapid thermal annealing; solid phase crystallization; orientation; interfacial reaction;

D O I：

10.1016/j.vacuum.2005.11.028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the orientation of domains in LiNbO3 (LN) thin films grown by electron-cyclotron resonance plasma sputtering on TiN films with various crystalline states. Deposition at 400 degrees C on an amorphous TiN produced partially crystallized and apparently c-axis-oriented LN. When TiN crystallized at 460 degrees C to become polycrystalline grains, the roughened surface randomized the orientation of LN. At 600 degrees C, the reaction of TiN with oxygen atoms supplied from the plasma created a TiOx layer. Rapid thermal annealing of amorphous LN films at 460 degrees C was the best solution for removing these disorientation factors, but annealing of amorphous LN on poly-crystalline TiN yielded no c-axis-oriented domains. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：704 / 707

页数：4

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