Fabrication of Co-M-O (M = Ti, Al and Si) granular thin films with giant magnetoresistance by reactive deposition method

被引：0

作者：

Takeno, Y ^{[1
]}

Shimada, Y ^{[1
]}

机构：

[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 3A期

关键词：

GMR; log-normal distribution; superparamagnetism; insulating granular system; Co-Ti-O; Co-Al-O; Co-Si-O; reactive deposition; molecular beam;

D O I：

10.1143/JJAP.41.1347

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Granular Co-M-O (M = Ti, Al and Si) thin films with giant magnetoresistance (GMR) were successfully prepared by the reactive deposition method using an O-2 beam at a highrate of similar to90 nm/min. From fitting of the magnetization curve assuming a log-normal size distribution, average diameters of Co particles were calculated to be 2-3 nm irrespective of the type of oxide matrix. The MR ratios in a field of 19kOe [MRr(19kOe)] are found to be 3-9% and there was a tendency of MRr (M = Si) < MRr(Al) < MRr(Ti). In particular, MRr(M = Ti, 19 kOe) was found to reach a large value of 9.3%.

引用

页码：1347 / 1348

页数：2

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