Optically pumped lasing from a single pillar microcavity with InGaAs/GaAs quantum well potential fluctuation quantum dots

被引:1
作者
Seak, G. [1 ]
Podemski, P. [1 ]
Misiewicz, J. [1 ]
Reitzenstein, S. [2 ]
Reithmaier, J. P. [2 ]
Forchel, A. [2 ]
机构
[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland
[2] Univ Wurzburg, D-97074 Wurzburg, Germany
关键词
gallium arsenide; III-V semiconductors; indium compounds; microcavity lasers; optical pumping; optical tuning; photoluminescence; Q-factor; quantum dot lasers; quantum well lasers; spontaneous emission; SCANNING-TUNNELING-MICROSCOPY; PHOTONIC CRYSTAL NANOCAVITY; SPONTANEOUS EMISSION; LASER; PHOTOLUMINESCENCE; THRESHOLD; CAVITY; HETEROSTRUCTURES; ENHANCEMENT; EXCITONS;
D O I
10.1063/1.3074364
中图分类号
O59 [应用物理学];
学科分类号
摘要
Here, an optical study is presented on cuboidal single pillar microresonators with a quantum-dot-like emitter formed from local fluctuations in the InGaAs/GaAs quantum well potential. By means of microphotoluminescence, emission spectra as a function of the excitation power density were recorded. In the low excitation spectra a number of sharp lines corresponding to the single quantum dots photoluminescence was observed. With increasing excitation power the spectra become dominated by the microcavity modes, on the background of which an intensive and narrow line appears when a certain threshold excitation power is exceeded. A threshold power corresponding to the onset of the superlinear emission intensity power dependence was determined, which is accompanied by a strong decrease in the emission mode linewidth, where both are the distinctive features of the lasinglike behavior. The threshold power density and the exponent of the superlinear part of the input-output characteristic increase with the pillar lateral size (d) and the quality factor (Q), however, they both decrease when plotted as a function of Q/d(2), which is the actual figure of merit of the spontaneous emission coupling factor (beta). It shows the dominant influence of the volume change effect over the cavity Q (finesse). Thus, larger beta values are assigned to the smaller micropillars, in spite of their lower Q values. A quantum dot character of the lasing has been confirmed in a temperature dependent experiment, which showed a number of emission intensity oscillations instead of the expected monotonic decay with the temperature increase, which is a fingerprint of the spectral tuning of the quantum dot emission spectrum through the optical cavity mode.
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页数:5
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共 32 条
  • [1] Ultrafast photonic crystal nanocavity laser
    Altug, Hatice
    Englund, Dirk
    Vuckovic, Jelena
    [J]. NATURE PHYSICS, 2006, 2 (07) : 484 - 488
  • [2] Inhibition and enhancement of the spontaneous emission of quantum dots in structured microresonators
    Bayer, M
    Reinecke, TL
    Weidner, F
    Larionov, A
    McDonald, A
    Forchel, A
    [J]. PHYSICAL REVIEW LETTERS, 2001, 86 (14) : 3168 - 3171
  • [3] Observation of the Purcell effect in high-index-contrast micropillars
    Bennett, A. J.
    Ellis, D. J. P.
    Shields, A. J.
    Atkinson, P.
    Farrer, I.
    Ritchie, D. A.
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (19)
  • [4] DEFINITION OF A LASER THRESHOLD
    BJORK, G
    KARLSSON, A
    YAMAMOTO, Y
    [J]. PHYSICAL REVIEW A, 1994, 50 (02): : 1675 - 1680
  • [5] PHOTOLUMINESCENCE FROM A SINGLE GAAS/ALGAAS QUANTUM DOT
    BRUNNER, K
    BOCKELMANN, U
    ABSTREITER, G
    WALTHER, M
    BOHM, G
    TRANKLE, G
    WEIMANN, G
    [J]. PHYSICAL REVIEW LETTERS, 1992, 69 (22) : 3216 - 3219
  • [6] ISLANDS AT SEMICONDUCTOR INTERFACES
    CATELLANI, A
    BALLONE, P
    [J]. PHYSICAL REVIEW B, 1992, 45 (24): : 14197 - 14203
  • [7] Multiwavelength ultralow-threshold lasing in quantum dot photonic crystal microcavities
    Chakravarty, S.
    Bhattacharya, P.
    Chakrabarti, S.
    Mi, Z.
    [J]. OPTICS LETTERS, 2007, 32 (10) : 1296 - 1298
  • [8] Factors influencing the interfacial roughness of InGaAs/GaAs heterostructures: A scanning tunneling microscopy study
    Chao, KJ
    Liu, N
    Shih, CK
    Gotthold, DW
    Streetman, BG
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (12) : 1703 - 1705
  • [9] Quantum-dot vertical-cavity surface-emitting laser based on the Purcell effect
    Deppe, DG
    Huang, H
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (22) : 3455 - 3457
  • [10] Gérard JM, 2003, TOP APPL PHYS, V90, P269