Growth and Characterization of InAs Sub-monolayer Quantum Dots with Varying Fractional Coverage

被引：4
|
作者：
Mukherjee, S. [1 ]
Pradhan, A. [1 ]
Mukherje, S. [2 ]
Maitra, T. [2 ]
Sengupta, S. [3 ]
Chakrabarti, S. [3 ]
Nayak, A. [2 ]
Bhunia, S. [1 ]
机构：
[1] HBNI, Saha Inst Nucl Phys, Surface Phys & Mat Sci Div, Kolkata 700064, India
[2] Presidency Univ, Dept Phys, 86-1 Coll St, Kolkata 700073, India
[3] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India
来源：
62ND DAE SOLID STATE PHYSICS SYMPOSIUM | 2018年 / 1942卷
关键词：
LUMINESCENCE PROPERTIES; TEMPERATURE; PHOTOLUMINESCENCE;
D O I：
10.1063/1.5028873
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have studied the optical properties of InAs sub monolayer (SML) quantum dots in GaAs quantum well with InAs average deposition below one monolayer (ML) [0.3 - 0.8 ML] in Molecular Beam Epitaxy (MBE) growth system. The samples have exhibited sharp photoluminescence peak at low temperature (3.3 K) which could be tuned in the near infrared (NIR) region (1.42 eV-1.47 eV) by controlling the InAs SML coverage.
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页数：4
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