TEM observations of 4H-SiC deformed at room temperature and 150°C

被引：1

作者：

Demenet, JL

Milhet, X

Rabier, J

Cordier, P

机构：

[1] Univ Poitiers, UMR 6630 CNRS, Met Phys Lab, F-86962 Futuroscope, France

[2] ENSMA, UMR 6617 CNRS, Mecan & Phys Mat Lab, F-86961 Futuroscope, France

[3] Univ Bayreuth, Bayer Geoinst, D-95440 Bayreuth, Germany

[4] Univ Sci & Technol Lille, ESA CNRS 8008, Lab Struct & Properties Etat Solide, Villeneuve Dascq, France

来源：

SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2 | 2004年 / 457-460卷

关键词：

4H-silicon carbide; plasticity; high pressure; perfect dislocations; partial dislocations;

D O I：

10.4028/www.scientific.net/MSF.457-460.343

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

4H-SiC single crystals have been deformed under 5 GPa at room temperature and 150degreesC using an anisotropic multi-anvil apparatus. Transmission Electron Microscopy observations show that the microstructure is composed of widely dissociated dislocations and perfect dislocations. The generation of such perfect dislocations could indicate that silicon carbide exhibits a change in deformation mechanism under very high stress, with a behavior similar to Si and III-V compounds.

引用

页码：343 / 346

页数：4

共 13 条

[1] Plastic deformation of minerals under extreme pressure using a multi-anvil apparatus [J].

Cordier, P ;

Rubie, DC .

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2001, 309 :38-43

[2] Plastic behavior of 4H-SiC single crystals deformed at low strain rates [J].

Demenet, JL ;

Hong, MH ;

Pirouz, P .

SCRIPTA MATERIALIA, 2000, 43 (09) :865-870

[3] Microstructures of 4H-SiC single crystals deformed under very high stresses [J].

Demenet, JL ;

Rabier, J ;

Milhet, X ;

Hong, MH ;

Pirouz, P ;

Stretton, I ;

Cordier, P .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (48) :12961-12966

[4] Stacking fault energy of 6H-SiC and 4H-SiC single crystals [J].

Hong, MH ;

Samant, AV ;

Pirouz, P .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 2000, 80 (04) :919-935

[5]

Pirouz P, 2001, PHILOS MAG A, V81, P1207, DOI 10.1080/01418610110033939

[6]

Pizzagalli L, 2003, PHILOS MAG, V83, P1191, DOI 10.1080/141861031000071999

[7] On a change in deformation mechanism in silicon at very high stress: new evidences [J].

Rabier, J ;

Demenet, JL .

SCRIPTA MATERIALIA, 2001, 45 (11) :1259-1265

[8]

Samant AV, 1998, PHYS STATUS SOLIDI A, V166, P155, DOI 10.1002/(SICI)1521-396X(199803)166:1<155::AID-PSSA155>3.0.CO

[9]

2-V

[10]

Samant AV, 2000, PHYS STATUS SOLIDI B, V222, P75, DOI 10.1002/1521-3951(200011)222:1<75::AID-PSSB75>3.0.CO

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