Direct and quantitative understanding of the non-Ohmic contact resistance in organic and oxide thin-film transistors

被引：51

作者：

Liu, Chuan ^{[1
,3
]}

Minari, Takeo ^{[4
]}

Xu, Yong ^{[2
]}

Yang, Bo-ru ^{[1
]}

Chen, Hui-Xuan ^{[1
]}

Ke, Qiutan ^{[1
]}

Liu, Xuying ^{[4
]}

Hsiao, Hsiang Chih ^{[5
]}

Lee, Chia Yu ^{[5
]}

Noh, Yong-Young ^{[2
]}

机构：

[1] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Sch Phys & Engn,Sch Microelect, Guangzhou 510275, Guangdong, Peoples R China

[2] Dongguk Univ, Dept Energy & Mat Engn, Seoul 100715, South Korea

[3] SYSU CMU Shunde Int Joint Res Inst, Shunde, Peoples R China

[4] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan

[5] Shenzhen China Star Optoelect Technol Co Ltd, Shenzhen 51813, Peoples R China

来源：

ORGANIC ELECTRONICS | 2015年 / 27卷

基金：

新加坡国家研究基金会;

关键词：

Output characteristics; Non-Ohmic contact; Contact interfacial resistance; Thin-film transistors; FIELD-EFFECT TRANSISTORS; INJECTION;

D O I：

10.1016/j.orgel.2015.09.024

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We explore the device physics of thin film transistors (TFTs) with non-Ohmic contacts and develop a simple and fast method for evaluating the contact properties TFTs through output characteristics. Using one single output scan, the quantitative relationship between contact resistances and drain voltage were evaluated, revealing the property of interfacial injection at non-Ohmic contacts. This is demonstrated and validated in both TFT simulations and experiments employing inorganic and organic TFTs. The approach can be applied to general TFTs with arbitrary materials and configurations conveniently and enables faster and improved understanding of TFT operation and device physics. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：253 / 258

页数：6

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